august 2010 FDMS0308CS n-channel powertrench ? syncfet tm ?2010 fairchild semiconductor corporation FDMS0308CS rev.c www.fairchildsemi.com 1 FDMS0308CS n-channel powertrench ? syncfet tm 30 v, 42 a, 3 m features max r ds(on) = 3.0 m at v gs = 10 v, i d = 21 a max r ds(on) = 3.5 m at v gs = 4.5 v, i d = 17 a advanced package and silicon combination for low r ds(on) and high efficiency syncfet schottky body diode msl1 robust package design 100% uil tested rohs compliant general description the FDMS0308CS has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications synchronous rectifier for dc/dc converters notebook vcore/ gpu low side switch networking point of load low side switch desktop mosfet maximum ratings t c = 25 c unless otherwise noted thermal characteristics package marking an d ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 42 a -continuous (silicon limited) t c = 25 c 113 -continuous t a = 25 c (note 1a) 22 -pulsed 150 e as single pulse avalanche energy (note 3) 98 mj p d power dissipation t c = 25 c 65 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.9 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS0308CS FDMS0308CS power 56 13 12 mm 3000 units 4 3 2 1 5 6 7 8 power 56 d d d d s s s g d d d d g s s s pin 1 bottom top
FDMS0308CS n-channel powertrench ? syncfet tm FDMS0308CS rev.c www.fairchildsemi.com 2 electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 14 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.6 3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c -5 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 21 a 1.9 3.0 m v gs = 4.5 v, i d = 17 a 2.5 3.5 v gs = 10 v, i d = 21 a, t j = 125 c 2.5 3.8 g fs forward transconductance v ds = 5 v, i d = 21 a 300 s (note 2) dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 3175 4225 pf c oss output capacitance 1175 1565 pf c rss reverse transfer capacitance 110 165 pf r g gate resistance 1.3 2.6 switching characteristics t d(on) turn-on delay time v dd = 15 v, i d = 21 a, v gs = 10 v, r gen = 6 14 25 ns t r rise time 612ns t d(off) turn-off delay time 35 56 ns t f fall time 510ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 21 a 47 66 nc q g total gate charge v gs = 0 v to 4.5 v 22 31 nc q gs gate to source gate charge 8.5 nc q gd gate to drain miller charge 4.9 nc drain-source diode characteristics v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.43 0.7 v v gs = 0 v, i s = 21 a (note 2) 0.75 1.2 t rr reverse recovery time i f = 21 a, di/dt = 300 a/ s 35 56 ns q rr reverse recovery charge 41 67 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 98 mj is based on starting t j = 25 c, l = 1 mh, i as = 14 a, v dd = 27 v, v gs = 10 v. 100% test at l = 0.3 mh, i as = 21 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
FDMS0308CS n-channel powertrench ? syncfet tm FDMS0308CS rev.c www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.00.51.01.52.0 0 30 60 90 120 150 v gs = 3.5 v v gs = 4.5 v pulse duration = 80 s duty cycle = 0.5% max v gs = 4 v v gs = 3 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0306090120150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = 3.5 v pulse duration = 80 s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4 v v gs = 4.5 v v gs = 3 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 i d = 21 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 2 4 6 8 10 i d = 21 a t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 30 60 90 120 150 v ds = 5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS0308CS n-channel powertrench ? syncfet tm FDMS0308CS rev.c www.fairchildsemi.com 4 figure 7. 0 1020304050 0 2 4 6 8 10 i d = 21 a v dd = 10 v v dd = 20 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 30 60 100 1000 5000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 t j = 100 o c 300 t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) 40 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 30 60 90 120 limited by package r jc = 1.9 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) s dc 10 s 1 s 100 ms 10 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r ja = 125 o c/w t a = 25 o c 200 figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 1 10 100 1000 10000 single pulse r ja = 125 o c/w t a = 25 o c 0.5 v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDMS0308CS n-channel powertrench ? syncfet tm FDMS0308CS rev.c www.fairchildsemi.com 5 figure 13. junction-to-ambient tr ansient thermal response curve 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.0001 0.001 0.01 0.1 1 single pulse r ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS0308CS n-channel powertrench ? syncfet tm FDMS0308CS rev.c www.fairchildsemi.com 6 syncfet schottky body diode characteristics fairchilds syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 14 shows the reverses recovery characteristic of the FDMS0308CS. schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. this will increase the power in the device. typical characteristics (continued) figure 14. FDMS0308CS syncfet body diode reverse recovery characteristic figure 15. syncfet body diode reverses leakage versus drain-source voltage 0 5 10 15 20 25 30 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) 0306090120150 -5 0 5 10 15 20 25 di/dt = 300 a/ s current (a) time (ns)
FDMS0308CS n-channel powertrench ? syncfet tm FDMS0308CS rev.c www.fairchildsemi.com 7 dimensional outline and pad layout
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